TOKYO — Japanese companies are moving to mass-produce gallium nitride (GaN) power semiconductor devices for electric vehicles, which stand to gain increased driving range, but high costs remain a hurdle.
Power semiconductor devices are used to control the flow of electricity in EVs and other products. Those that have less power loss and are more efficient than their conventional silicon counterparts are said to be next-generation. GaN is competing with silicon carbide (SiC) for applications in EV power semiconductor devices.
